Fabrication of SnSe Counter Electrode By Sputtering Method to Utilize In SnO2-Base DSSCs

Document Type : Research Article

Authors

1 Faculty of Science and Engineering, Department of Physics , Sari Branch, Islamic Azad University, Sari, Iran

2 BLTP, Joint Institute for Nuclear Research, Dubna, 141980, Moscow Region, Russia

3 3 S.U.UMAROV PHYSICAL–TECHNICAL INSTITUTE OF THE NATIONAL ACADEMY OF SCIENCES OF TAJIKISTAN, Republic of Tajikistan, Dushanbe, Tajikistan

Abstract

Dye-sensitized solar cells (DSSCs) have received a lot of attention nowadays. One of the most essential components of DSSC is the counter electrode, which is usually made of platinum. Since platinum is an expensive material, we suggest using the SnSe electrode. By selenizing a layer of coated tin on glass thru sputtering, we obtained SnSe and used this layer as the counter electrode in a DSSC. We also used tin oxide as photoanode in the structure of the solar cell. By changing the selenization temperature, we improved the charge transport and electrocatalytic properties of the layer and optimized the solar cell performance. We also investigated the morphological properties of the layers with FESEM images. We used CV and EIS analyzes to test the electrocatalytic and charge transport properties. Also, the current-voltage curve of the fabricated cells reveals that the cell, which is made of the synthesized layer at 450 °C with an efficiency of 4.9%, gives us the best performance.

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Nashrieh Shimi va Mohandesi Shimi Iran

Articles in Press, Accepted Manuscript
Available Online from 30 April 2022

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